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March 2013
FDD050N03B
N-Channel PowerTrench ? MOSFET
30 V, 90 A, 5.0 m Ω
Features
? R DS(on) = 3.7 m Ω ( Typ.)@ V GS = 10 V, I D = 25 A
? Fast Switching Speed
? Low Gate Charge, Q G = 33 nC( Typ.)
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ? ’s advance PowerTrench ? process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
? High Performance
R DS(on)
Trench Technology for Extremely Low
Applications
? High Power and Current Handling Capability
? Synchronous Rectification for ATX / Server / Telecom PSU
? RoHS Compliant
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted
Symbol
V DSS
Drain to Source Voltage
Parameter
FDD050N03B
30
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C, Silicon Limited)
- Continuous (T C = 100 o C, Silicon Limited)
- Continuous (T C = 25 o C, Package Limited)
±16
90*
63*
50
V
A
I DM
Drain Current
- Pulsed
(Note 1)
360
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 3)
72
2
65
0.43
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
o C
o C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.
Thermal Characteristics
Symbol
Parameter
FDD050N03B
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 5)
2.3
40
o
C/W
?2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
1
www.fairchildsemi.com
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